Amorphous metal oxide semiconductor like Indium-Gallium-Zinc-Oxide (InGaZnO) is the most commonly used oxide material in liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays manufacturing due to their field-effect mobility >10 cm2/V·s, good uniformity over large glass substrates sizes, low temperature process and relatively good bias-thermal stress stability. Besides driving innovative thin-film transistors for display applications, InGaZnO is also seen as a premium material to help the semiconductor industry to further improve system scaling like placing the transistors in the Back-End-Of-Line of a chip rather than in the periphery. Last but not least, because of their extremely low leakage current and relatively good carrier mobility, oxide semiconductor (IGZO) can make nonvolatile memories more power efficient while maintaining the data writing and reading at very high speed. Integration of such material in DRAM cell architecture opens up the possibility of 3D DRAM integration, which helps to continue the DRAM scaling road map.
In this job, you will actively contribute to the development of this material within Memory Device team. Through in-depth hardware characterization, you will guide our integration experts to realize an ultra-scaled (Lg< 20nm) demonstrator with metal oxide material as a channel material. You will also fix issues and improve electrical performance of the IGZO-based MOS transistors. The ideal candidate has experience in Semiconductor device electrical testing, innovative thin-film transistors, and device physics understanding of amorphous semiconductors.
Experience in device design using Cadence or Klayout will be a plus.
We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.
We are proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth.
We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a competitive salary.
This postdoctoral position is funded by imec through KU Leuven. Because of the specific financing statute which targets international mobility for postdocs, only candidates who did not stay or work/study in Belgium for more than 24 months in the past 3 years can be considered for the position (short stays such as holiday, participation in conferences, etc. are not taken into account).Apprenez-en davantage
|Intitulé||Postdoc Researcher Study of Highly scaled IGZO transistors for memory applications|
|Job location||Kapeldreef 75, B-3001 Heverlee|
|Publié||septembre 17, 2019|
|Date limite d'inscription||Non Spécifiée|
|Types d'emploi||Post doc  |
|Domaines de recherche :||Génie des matériaux,   Technologies énergétiques,   Génie physique,   Physique des matériaux,   Génie électrique,   Électronique  |